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Электронный компонент: 2SB1275

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2SB1275 / 2SB1236A
Transistors
Rev.A
1/3
Power Transistor (
-
160V ,
-
1.5A)
2SB1275 / 2SB1236A


Features
1) High breakdown voltage.(BV
CEO
= -
160V)
2) Low collector output capacitance.
(Typ. 30pF at V
CB
=
10V)
3) High transition frequency.(f
T
=
50MH
Z
)
4) Complements the 2SD1918 / 2SD1857A.


Absolute maximum ratings (Ta = 25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
-
160
-
160
-
5
-
1.5
1
1
150
-
55
+
150
Unit
V
V
V
A(DC)
-
3
2
1
A(Pulse)
W(Tc
=
25
C)
W
10
2SB1275
2SB1236A
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
1 Single pulse Pw
=
100ms
2 Printed circuit board 1.7mm thick, collector plating 1cm
2
or larger.
External dimensions (Unit : mm)
EIAJ : SC-63
ROHM : CPT3
ROHM : ATV
2SB1236A
2SB1275
0.45
(2) Collector
1.05
(3) Base
Taping specifications
(1) Emitter
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
( 2
)
( 3
)
C0.5
0.65
0.9
( 1
)
0.75
2.3
0.9
1.5
5.5
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
5.1

Packaging specifications and h
FE
Type
2SB1275
CPT3
P
TL
2500
2SB1236A
ATV
PQ
TV2
2500
Package
h
FE
Code
Basic ordering unit (pieces)

Electrical characteristics (Ta = 25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
f
T
Cob
-
160
-
160
-
5
-
-
-
82
-
-
-
-
-
-
-
-
-
50
30
-
-
-
-
1
-
1
-
2
180
-
-
V
V
V
A
A
V
-
h
FE
82
-
270
-
2SB1275
2SB1236A
MHz
pF
I
C
= -
50
A
I
C
= -
1mA
I
E
= -
50
A
V
CB
= -
120V
V
EB
= -
4V
I
C
/I
B
= -
1A/
-
0.1A
V
CE
= -
5V , I
C
= -
0.1A
V
CE
= -
5V , I
E
=
0.1A , f
=
30MHz
V
CB
= -
10V , I
E
=
0A , f
=
1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
2SB1275 / 2SB1236A
Transistors
Rev.A
2/3
Electrical characteristics curves
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Ground emitter output characteristics
0
-
1.0
-
0.8
-
0.6
-
0.4
-
0.2
-
5
-
4
-
3
-
2
-
1
0
Ta
=
25
C
I
B
=
0mA
-
1mA
-
2mA
-
3mA
-
4mA
-
5mA
-
6mA
P
C
=
1W
-
10mA
-
7mA
-
8mA
-
9mA
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.2 Ground emitter propagation characteristics
-
10
-
2
-
1
-
0.5
-
0.2
-
0.1
-
0.01
-
0.02
-
0.05
-
5
-
1.8
-
1.4
-
1.6
-
1.2
-
1.0
-
0.8
-
0.6
-
0.4
-
0.2
0
V
CE
= -
5V
Ta
=
100
C
25
C
-
25
C
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
Fig.3 DC current gain vs. collector current ( )
20
50
100
200
500
1000
10
5
2
1
-
10
-
2
-
1
-
0.2
-
0.1
-
0.01
-
0.02
-
0.05
-
0.5
-
5
Ta
=
25
C
V
CE
= -
10V
-
5V

COLLECTOR CURRENT : I
C
(A)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Fig.5 Collector-emitter saturation voltage
vs. collector current
-
10
-
10
-
2
-
1
-
5
-
0.2
-
0.1
-
0.5
-
0.02
-
0.01
-
0.05
-
2
-
1
-
0.2
-
0.1
-
0.01
-
0.02
-
0.05
-
0.5
-
5
Ta
=
25
C
I
C
/I
B
=
50
20
10
COLLECTOR CURRENT : I
C
(A)
BASE SATURATION VOLTAGE : V
BE(sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Fig.6 Collector-emitter saturation voltage
Base-emitter saturation voltage
vs. collector current
-
10
-
10
-
2
-
1
-
5
-
0.2
-
0.1
-
0.5
-
0.02
-
0.01
-
0.05
-
2
-
1
-
0.2
-
0.1
-
0.01
-
0.02
-
0.05
-
0.5
-
5
Ta
=
100
C
Ta
= -
25
C
-
25
C
25
C
25
C
100
C
I
C
/I
B
=
10
V
CE(sat)
V
BE(sat)
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
Fig.4 DC current gain vs. collector current ( )
20
50
100
200
500
1000
10
5
2
1
-
10
-
2
-
1
-
0.2
-
0.1
-
0.01
-
0.02
-
0.05
-
0.5
-
5
V
CE
= -
10V
Ta
=
100
C
-
25
C
25
C

COLLECTOR TO BASE VOLTAGE : V
CB
(V)
COLLECTOR OUTPUT CAPACITANCE: C
ob
(pF)
Fig.8 Collector output capacitance vs.
collector-base voltage
20
50
100
200
500
1000
10
5
2
1
-
100
-
20
-
10
-
2
-
1
-
0.1
-
0.2
-
0.5
-
5
-
50
Ta
=
25
C
I
E
=
0A
f
=
1MHz
Fig.9 Safe operating area (2SB1236A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
-
10
-
2
-
1
-
0.2
-
0.1
-
0.02
-
0.01
-
0.001
-
0.002
-
0.005
-
0.05
-
0.5
-
5
-
0.2
-
0.1
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
-
100
-
200
-
500
-
1000
Ic Max. (Pulse
)
DC
Pw=10ms
100ms
Ta=25
C
Single
NONREPETITIVE
PULSE
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.7 Resistance raito vs. emmiter current
20
50
100
200
500
1000
10
5
2
1
1
2
5
10
20
50
100
200
500 1000
Ta
=
25
C
V
CE
= -
5V

2SB1275 / 2SB1236A
Transistors
Rev.A
3/3

Fig.10 Safe operating area (2SB1275)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
-
10
-
2
-
1
-
0.2
-
0.1
-
0.02
-
0.01
-
0.001
-
0.002
-
0.005
-
0.05
-
0.5
-
5
-
0.2
-
0.1
-
0.5
-
1
-
2
-
5
-
10
-
20
-
50
-
100
-
200
-
500
-
1000
Ic Max. (Pulse
)
DC
Pw=10ms
100ms
Ta=25
C
Single
NONREPETITIVE
PULSE
Appendix
Appendix1-Rev1.1


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appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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